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The Taiwan Semiconductor 1N5402GHA0G is a standard rectifier diode featuring a glass passivated chip junction and DO-201AD plastic package. It provides a maximum average forward rectified current of 3 A and a repetitive peak reverse voltage of 200 V. The device supports a non-repetitive peak forward surge current of 125 A and operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a maximum forward voltage of 1.0 V at 3 A, a typical reverse current of 5 µA at rated voltage, and a junction capacitance of 25 pF.
Verify the specific ordering code suffix against the manufacturer's official documentation to confirm packaging details. The 'H' designation indicates AEC-Q101 qualification status, while 'A0G' specifies the ammo box packing format containing 500 units. Confirm that the component meets RoHS compliance and halogen-free requirements as stated in the datasheet before finalizing procurement specifications.
Select this component when a 200 V blocking voltage and 3 A continuous current rating are required for general-purpose rectification. Ensure the application environment remains within the specified -55°C to +150°C operating temperature range. Consider the thermal resistance values for heat dissipation planning in enclosed designs. Verify that the DO-201AD package dimensions fit the target PCB layout constraints.
This part belongs to the 1N5400G series of 3 A silicon rectifiers manufactured by Taiwan Semiconductor. The series covers voltage ratings from 50 V to 1000 V across multiple variants. The 1N5402 variant specifically targets 200 V applications. The GHA0G suffix denotes an AEC-Q101 qualified version supplied in an ammo box, distinguishing it from standard tape and reel configurations.
Compatible substitutes include Vishay 1N5402-E3/66 and other manufacturers' 1N5402 equivalents meeting identical 3 A and 200 V specifications. Verify pinout compatibility and thermal performance characteristics before substitution.