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The Microchip Technology 1N5551USE3 is a standard recovery rectifier diode designed for through-hole mounting in an axial package. It features a maximum repetitive reverse voltage of 400 V and supports an average forward rectified current of 5 A. The device exhibits a maximum forward voltage drop of 1.2 V at 9 A and a reverse leakage current of 1 µA at 400 V. Its reverse recovery time is specified at 2 µs, with a peak forward surge current capability of 100 A. The component operates within a junction temperature range of -65°C to +175°C.
Verify the specific suffix 'USE3' against official Microchip documentation to confirm compliance with RoHS directives and material declarations. Ensure that the ordering information matches the exact electrical specifications required for your design, as suffixes can indicate variations in packaging or environmental compliance rather than functional changes.
Select this component when a 400 V blocking voltage and 5 A continuous current rating are required in an axial leaded package. Consider its 2 µs reverse recovery time for standard frequency applications where fast recovery characteristics are not critical. Evaluate the thermal management requirements given the high operating temperature limit and the package's thermal resistance characteristics.
This part belongs to the 1N555x series of silicon planar power rectifiers manufactured by Microchip Technology. These devices are widely recognized for their reliability in industrial and commercial power conversion systems. The series offers various voltage ratings while maintaining consistent current handling capabilities across different package options.
Direct replacements include other manufacturers' 1N5551 equivalents such as those from Vishay or ON Semiconductor, provided they meet the same 400 V/5 A specifications and axial package dimensions. Verify pinout compatibility and thermal performance before substitution.