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The Microchip Technology 1N5554/TR is a standard recovery rectifier diode designed for through-hole mounting in an axial B package. It supports a maximum DC reverse voltage of 1000 V and an average forward rectified current of 3 A. The device exhibits a typical forward voltage drop of 1.2 V at 9 A and a reverse leakage current of 1 µA at its rated voltage. Operating junction temperatures range from -65°C to +175°C, with a reverse recovery time of 2 µs.
Verify the specific suffix designation during procurement, as it dictates the reel packaging format required for automated assembly processes. Confirm compliance requirements regarding RoHS status, as this component family may not meet all environmental directives. Ensure the ordering quantity aligns with the manufacturer's standard reel specifications to avoid handling discrepancies.
Select this component when high voltage blocking capability and moderate current handling are required in a through-hole configuration. Evaluate the 2 µs reverse recovery time against switching frequency requirements to ensure adequate performance. Consider the wide operating temperature range for environments subject to significant thermal fluctuations or high ambient heat loads.
This part belongs to the 1N55xx series of glass-passivated silicon rectifiers manufactured by Microchip Technology. The series provides standardized electrical characteristics for legacy and modern electronic designs requiring robust discrete semiconductor components. The axial package ensures compatibility with traditional PCB layouts and manual assembly techniques.
Direct substitutes include the 1N5554 without the trailing suffix for bulk packaging variants. Verify pinout compatibility and electrical parameter equivalence before substituting with other manufacturers' equivalents.