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Product Detailed Parameters
- Description：DIODE STANDARD 200V 1A AXIAL
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io)：1A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 3 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：2 µs
- Current - Reverse Leakage @ Vr：500 nA @ 200 V
- Capacitance @ Vr, F：-
- Mounting Type：Through Hole
- Package / Case：A, Axial
- Supplier Device Package：A, Axial
- Operating Temperature - Junction：-65°C ~ 200°C
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Overview
The Microchip Technology 1N5614 is a standard recovery rectifier diode designed for high-reliability applications. It features a maximum DC reverse voltage (Vr) of 200 V and an average rectified output current (Io) of 1 A. The device exhibits a forward voltage (Vf) of 1.3 V at 3 A and a reverse leakage current of 500 nA at 200 V. Its junction temperature range spans from -65°C to 200°C, with a typical reverse recovery time (trr) of 2 µs.
Feature Summary
- Military qualified to MIL-PRF-19500/427 standards
- Hermetically sealed voidless-glass construction
- Internal Category I metallurgical bond
Applications
- High-reliability circuits where failure cannot be tolerated
- General-purpose rectification in harsh environments
- Aviation and defense electronic systems
Procurement Notes
Verify the specific suffix or package configuration required for your design, as the base part number may correspond to through-hole axial packages while surface mount variants carry distinct identifiers. Confirm military qualification requirements against your project specifications. Check datasheets for exact mechanical dimensions and lead form details before finalizing procurement orders.
Selection Notes
Select this component when a hermetically sealed, military-grade silicon rectifier is necessary for critical systems. Ensure the 200 V reverse voltage rating aligns with peak circuit voltages. Consider the 2 µs recovery speed for general frequency applications rather than high-speed switching. Verify thermal management capabilities within the specified -65°C to 200°C junction temperature range.
Part Context
This diode belongs to the 1N5614 series, which includes various voltage ratings up to 1000 V. The series is characterized by its robust glass passivation and voidless sealing process. Microchip offers both through-hole and surface mount versions within this family, maintaining consistent electrical performance across different packaging options for standardized reliability.
Replacement Considerations
Direct substitutes include JANTX1N5614 for equivalent military specifications. Commercial equivalents may vary in hermetic sealing and qualification status. Verify pinout compatibility and ensure replacement parts meet the same MIL-PRF-19500/427 standards if environmental sealing is required.
