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The Microchip Technology 1N5615 is a single-element silicon rectifier diode designed for through-hole mounting in an A-package (DO-204AC/DO-15) axial lead configuration. It features a maximum repetitive peak reverse voltage of 200 V and an average forward rectified current rating of 1 A. The device exhibits a maximum non-repetitive peak forward surge current of 50 A, a maximum forward voltage drop of 1.2 V, and a maximum reverse leakage current of 500 nA at rated voltage. Operating junction temperatures range from -65 °C to +175 °C.
Verify the specific manufacturer lot code and date code upon receipt to ensure compliance with project requirements. Confirm that the component matches the DO-15 package dimensions and terminal finish specifications listed in the official datasheet. Check for any relevant product change notifications or material declarations prior to final assembly integration.
Select this component when a robust, glass-passivated silicon rectifier is required for through-hole PCB designs. The 200 V reverse voltage rating suits low-to-medium voltage DC conversion tasks. Ensure the circuit design accommodates the specified 1.2 V forward voltage drop and thermal dissipation limits within the -65 °C to +175 °C operating range.
This part belongs to the standard 1N56xx series of fast recovery rectifiers manufactured by Microchip Technology. These components are widely utilized in industrial and commercial electronics where reliable unidirectional current flow is essential. The series offers various voltage ratings while maintaining consistent mechanical and electrical performance standards across the product line.
Equivalent parts include Vishay 1N5615GP and BKC Semiconductors 1N5615. Verify pinout compatibility and package dimensions before substitution.