ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE ARRAY SCHOTTKY 50V 33MA UB
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：50 V
- Current - Average Rectified (Io) (per Diode)：33mA
- Voltage - Forward (Vf) (Max) @ If：1 V @ 15 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：200 nA @ 50 V
- Operating Temperature - Junction：-65°C ~ 150°C
- Mounting Type：Surface Mount
- Package / Case：3-SMD, No Lead
- Supplier Device Package：UB
- Grade：-
- Qualification：-
Download product information
Overview
The Microchip Technology 1N5711UBCA is a small-signal Schottky barrier diode designed for surface-mount applications. It features a ceramic encapsulation and meets military-grade qualifications under MIL-PRF-19500/444. The device utilizes silicon technology to provide high breakdown voltage and low turn-on characteristics. Key electrical parameters include a maximum repetitive reverse voltage of 70V and an average rectified forward current of 33mA. It operates within a junction temperature range of -65°C to +150°C.
Feature Summary
- Hermetically sealed ceramic surface-mount package for high-reliability environments
- Military qualification compliant with MIL-PRF-19500/444 standards
- Low reverse leakage current characteristics suitable for sensitive detection
Applications
- High-level UHF/VHF detection circuits
- Pulse application systems requiring broad dynamic range
- High-reliability aerospace and defense electronics
Procurement Notes
Verify the specific JAN suffix against the official datasheet to confirm the exact qualification level and testing requirements. Ensure the ceramic package type matches the design constraints for thermal management and mechanical stability in the target assembly process.
Selection Notes
Select this component when a hermetically sealed, surface-mount Schottky diode with military reliability is required. It serves as the surface-mount equivalent to the axial-leaded 1N5711-1. Consider the ceramic package profile and soldering temperatures during the layout phase.
Part Context
This part belongs to the 1N5711 series of Schottky barrier diodes manufactured by Microchip Technology (formerly Microsemi). The family includes various packages and qualification levels, such as commercial and JANTX variants, all sharing the core semiconductor characteristics defined by the base 1N5711 specification.
Replacement Considerations
The axial-leaded 1N5711-1 is the direct through-hole equivalent within the same qualification family. Other surface-mount options like the 1N5711UR-1 may be available depending on the required package style.
