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The 1N5711W-7 is a single-element silicon Schottky rectifier diode manufactured by Diodes Incorporated. It utilizes the SOD-123-2 surface-mount package and operates within a temperature range of -55°C to +125°C. Key electrical specifications include a maximum repetitive reverse voltage (Vrrm) of 70 V, a forward current (If) of 15 mA, and a power dissipation (Pd) of 250 mW. The device exhibits a typical forward voltage (Vf) of 1 V at rated current and a maximum reverse leakage current (Ir) of 200 nA.
Verify component authenticity through authorized distribution channels due to potential counterfeiting risks. Confirm RoHS compliance status as indicated on official datasheets, noting that specific manufacturing lots may vary. Validate package markings against the SOD-123-2 physical dimensions to ensure correct form factor integration into printed circuit board layouts.
Select this component when a low-capacitance Schottky diode is required for RF or high-speed switching applications. Ensure the 15 mA forward current rating meets the load requirements, as higher currents necessitate alternative packages. Compare thermal resistance values if operating near the maximum junction temperature limit of 125°C to maintain reliability standards.
This part belongs to the 1N5711 series of small-signal Schottky diodes. While the standard 1N5711 typically uses through-hole DO-35 packaging, the W-7 suffix denotes the surface-mount SOD-123 variant produced by Diodes Incorporated. This series is historically recognized for its use in microwave detection and pulse processing applications.
Direct substitutes include other 1N5711-series variants from different manufacturers, such as those from Microchip Technology. Verify pinout compatibility and ensure the replacement maintains the 70 V reverse voltage rating and similar forward voltage characteristics for equivalent circuit performance.