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The Microchip Technology 1N5712UBCC is a small-signal Schottky barrier diode designed for surface-mount applications. It utilizes silicon technology and is housed in the UB-3 package. The device features a single configuration with an average rectified output current of 33 mA and a maximum repetitive reverse voltage of 70 V. Key electrical characteristics include a forward voltage of 1 V and a reverse leakage current of 150 nA. The component operates within a temperature range from -65°C to +150°C.
Verify the specific suffix UBCC against official Microchip documentation to confirm package type and qualification level. Ensure compatibility with surface-mount assembly processes. Confirm RoHS status and environmental compliance through the manufacturer's datasheet before integration into production schedules.
Select this component when a low-profile surface-mount Schottky diode is required for high-frequency applications. The 70 V rating suits moderate voltage environments, while the 33 mA current limit defines its capacity for small-signal tasks. Compare thermal resistance and package dimensions against board space constraints.
This part belongs to the 1N57xx series of small-signal Schottky diodes manufactured by Microchip Technology. The series offers various package options including axial leaded and surface-mount configurations. The 1N5712UBCC specifically addresses the need for compact, reliable rectification in modern electronic assemblies requiring fast switching speeds.
Consult Microchip datasheets for direct equivalents within the 1N57xx family. Verify pinout compatibility and electrical parameters such as forward voltage and reverse voltage when substituting with other manufacturers' Schottky diodes.