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The Microchip Technology 1N5712UB/TR is a Schottky barrier diode in a ceramic surface mount package, qualified per MIL-PRF-19500/444. It features a maximum working peak reverse voltage of 16 V and an average rectified output current of 75 mA. The device exhibits a maximum forward voltage of 1.0 V at 35 mA and a maximum reverse leakage current of 150 nA at 16 V. Capacitance is limited to 2.0 pF at 0 V and 1 MHz. Operating junction and storage temperatures range from -65 °C to +150 °C.
Verify the specific reliability level (JAN, JANTX, JANTXV, or JANS) required for the application, as these levels are available under the MIL-PRF-19500/444 specification. Confirm that the tape and reel packaging aligns with EIA-418D standards if automated assembly is utilized. Ensure the polarity configuration matches the circuit design needs.
Select this component when a low-profile ceramic surface mount Schottky diode is required for high-reliability environments. The 1N5712UB variant specifically suits circuits requiring a 16 V reverse voltage rating and 75 mA current handling capability. Consider the thermal resistance of 100 °C/W and derating curves for operation near the maximum junction temperature limit.
This part belongs to the 1N5711UB and 1N5712UB series of Schottky barrier diodes. It serves as the surface mount equivalent to JEDEC registered axial-leaded numbers like 1N5712-1. The series also includes common anode, common cathode, and doubler polarities, offering flexibility for various circuit topologies within the same package family.
The 1N5712-1 is the DO-35 axial-leaded equivalent. For surface mount alternatives within the same qualification levels, consider the 1N5712UR-1 in the DO-213AA package.