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The Microchip Technology 1N5807 is a silicon rectifier diode designed for high-reliability applications. It features a maximum average forward current of 6 A and a maximum repetitive peak reverse voltage of 50 V. The device exhibits an ultrafast recovery characteristic with a typical reverse recovery time of 30 ns. It is available in through-hole axial leaded packages, including the standard 1N5807 and military-qualified variants such as JAN1N5807/TR.
Verify the specific suffix (e.g., CB, US, TR) to confirm package type and qualification level. Ensure compliance with RoHS requirements if applicable, as many variants are non-compliant. Confirm lead availability and production lead times directly with authorized distributors or the manufacturer due to potential long delivery periods for military-grade components.
Select this component when a 50 V rating and 6 A continuous current capacity are required alongside ultrafast recovery characteristics. Consider the JAN variant for strict military specifications or the US suffix for surface mount integration. Evaluate thermal management needs based on the 125 A non-repetitive peak forward surge current capability.
This part belongs to the 1N5807CB through 1N5811CB series of ultrafast recovery glass rectifiers. These devices are industry-recognized for working peak reverse voltages ranging from 50 to 150 volts. They utilize internal Category III metallurgical bonds within voidless-glass constructions to ensure durability and consistent electrical performance under stress.
Direct substitutes include other 1N5807 equivalents from different manufacturers that meet the 50 V, 6 A, and 30 ns recovery time specifications. For military applications, verify equivalent MIL-PRF-19500/477 or /742 qualifications.