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The Microchip Technology 1N5807URS/TR is a military-qualified ultrafast recovery rectifier diode. It features a working peak reverse voltage of 50 V and an average rectified output current rating of 6.0 A at 75°C case temperature, or 3.0 A at 55°C ambient temperature. The device exhibits a maximum reverse recovery time of 30 ns and a forward surge current capability of 125 A. It utilizes a void-less hermetically sealed glass package with one square and one round end cap (URS configuration).
Verify the specific ordering suffix to confirm the URS package configuration and tape-and-reel packaging format. Confirm that the required qualification level matches the JAN, JANTX, JANTXV, or JANS designation needed for the target application environment. Ensure compliance requirements are met as RoHS compliant versions are available only on commercial grades.
Select this component when a 50 V reverse voltage rating and 6.0 A current capacity are required in a surface mount form factor. Consider the 30 ns reverse recovery time for high-frequency switching operations. Evaluate thermal management needs based on the junction-to-end cap thermal resistance provided in the datasheet graphs.
This part belongs to the 1N5807US, 1N5809US, 1N5811US, and URS series of ultrafast recovery glass rectifiers. These devices are designed as JEDEC registered surface mount equivalents to standard through-hole rectifiers while offering superior performance metrics for demanding environments.
Direct replacements include other variants within the 1N5807US, 1N5809US, and 1N5811US series from Microchip Technology, provided the voltage ratings and package configurations align with the design requirements.
The maximum reverse recovery time (trr) is specified as 30 ns under defined test conditions.
Polarity is indicated by a band on the cathode end of the device body.