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The 1N5809US is a single ultrafast recovery rectifier diode manufactured by Microchip Technology. It features a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current rating of 3 A. The device exhibits a fast recovery time of 30 ns and a low forward voltage drop of 875 mV at 4 A. Reverse leakage current is specified at 5 µA at 100 V. It operates within a junction temperature range of -65°C to +175°C and is housed in a hermetically sealed SQ-MELF (B) surface-mount package.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and military qualification level. Ensure the component meets the required environmental specifications for the intended application. Cross-reference the part number with the latest product change notifications to identify any manufacturing updates or material changes that may affect performance or compatibility.
Select this component when a hermetically sealed, ultrafast recovery diode is required for critical systems. The 100 V reverse voltage and 3 A current rating define its operational limits. Consider the SQ-MELF package for surface-mount assembly needs. Verify thermal management requirements given the wide operating temperature range and potential heat dissipation during high-current operation.
This component belongs to the 1N58xxUS series of ultrafast recovery glass rectifiers. These devices are designed for applications where failure cannot be tolerated. The series offers working peak reverse voltages from 50 to 150 volts. The 1N5809US specifically provides a 100 V rating within this lineup, sharing similar ultrafast recovery traits with other variants in the family.
Consult the manufacturer's cross-reference guide for qualified substitutes. Equivalent parts must match the 100 V reverse voltage, 3 A current rating, and SQ-MELF package. Military-grade replacements require matching MIL-PRF-19500/477 qualification.