1N5809US

1N5809US

$6.83
  • Description:DIODE STANDARD 100V 3A B SQMELF
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:8a6e1d3a7262 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE STANDARD 100V 3A B SQMELF
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io):3A
  • Voltage - Forward (Vf) (Max) @ If:875 mV @ 4 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):30 ns
  • Current - Reverse Leakage @ Vr:5 µA @ 100 V
  • Capacitance @ Vr, F:60pF @ 10V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:SQ-MELF, B
  • Supplier Device Package:B, SQ-MELF
  • Operating Temperature - Junction:-65°C ~ 175°C

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1N5809US

Overview

The 1N5809US is a single ultrafast recovery rectifier diode manufactured by Microchip Technology. It features a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current rating of 3 A. The device exhibits a fast recovery time of 30 ns and a low forward voltage drop of 875 mV at 4 A. Reverse leakage current is specified at 5 µA at 100 V. It operates within a junction temperature range of -65°C to +175°C and is housed in a hermetically sealed SQ-MELF (B) surface-mount package.

Feature Summary

  • Hermetically sealed void-less glass construction for high reliability
  • Ultrafast recovery characteristics suitable for high-frequency applications
  • Military qualification per MIL-PRF-19500/477 standards

Applications

  • High-reliability power conversion circuits
  • Free-wheeling rectification in switching power supplies
  • DC-DC converter output stages

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and military qualification level. Ensure the component meets the required environmental specifications for the intended application. Cross-reference the part number with the latest product change notifications to identify any manufacturing updates or material changes that may affect performance or compatibility.

Selection Notes

Select this component when a hermetically sealed, ultrafast recovery diode is required for critical systems. The 100 V reverse voltage and 3 A current rating define its operational limits. Consider the SQ-MELF package for surface-mount assembly needs. Verify thermal management requirements given the wide operating temperature range and potential heat dissipation during high-current operation.

Part Context

This component belongs to the 1N58xxUS series of ultrafast recovery glass rectifiers. These devices are designed for applications where failure cannot be tolerated. The series offers working peak reverse voltages from 50 to 150 volts. The 1N5809US specifically provides a 100 V rating within this lineup, sharing similar ultrafast recovery traits with other variants in the family.

Replacement Considerations

Consult the manufacturer's cross-reference guide for qualified substitutes. Equivalent parts must match the 100 V reverse voltage, 3 A current rating, and SQ-MELF package. Military-grade replacements require matching MIL-PRF-19500/477 qualification.

1N5809US1N5809US
$6.83
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