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The Microchip Technology 1N5811E3 is a silicon fast recovery rectifier diode designed for high-frequency applications. It features a maximum repetitive reverse voltage of 150 V and an average forward rectified current rating of 6 A. The device exhibits a low forward voltage drop of 875 mV at 4 A and a rapid reverse recovery time of 30 ns. With a non-repetitive peak surge current capacity of 125 A, it operates within a junction temperature range of -65°C to +175°C.
Verify the specific suffix E3 confirms lead-free compliance and RoHS status before procurement. Confirm package type availability as axial through-hole variants exist alongside surface mount options like the USE3 series. Ensure the selected variant matches the required current and voltage ratings for the target circuit design.
Select this component when a standard axial package is required for 150 V applications. The 6 A continuous current rating supports moderate power levels. Verify that the 30 ns recovery time meets the switching frequency requirements of the specific converter topology being implemented.
This part belongs to the 1N58xx series of fast recovery rectifiers manufactured by Microchip Technology. It serves as a high-current alternative to smaller signal diodes, bridging the gap between general-purpose rectifiers and specialized high-speed devices. The E3 suffix indicates environmental compliance without altering electrical performance.
The 1N5811USE3/TR is a verified surface mount replacement offering identical electrical specifications in a different package format.