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Product Detailed Parameters
- Description：DIODE STANDARD 150V 3A B SQMELF
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：150 V
- Current - Average Rectified (Io)：3A
- Voltage - Forward (Vf) (Max) @ If：875 mV @ 4 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：30 ns
- Current - Reverse Leakage @ Vr：5 µA @ 50 V
- Capacitance @ Vr, F：60pF @ 10V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：SQ-MELF, B
- Supplier Device Package：B, SQ-MELF
- Operating Temperature - Junction：-65°C ~ 175°C
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Overview
The Microchip Technology 1N5811US is a single fast recovery rectifier diode designed for surface mount applications. It features a maximum repetitive peak reverse voltage of 150 V and an average forward current rating of 3 A, with a surge current capacity of 125 A. The device exhibits a typical forward voltage drop of 875 mV at rated current and a reverse leakage current of 5 uA. Its ultrafast recovery time is specified at 30 ns. The component operates within a junction temperature range of -65°C to +175°C and is housed in a SQ-MELF package.
Feature Summary
- Ultrafast recovery characteristics suitable for high-frequency switching applications
- Hermetically sealed glass construction for enhanced reliability
- Surface mount MELF package design for automated assembly
Applications
- High-reliability power supply circuits
- Free-wheeling rectification in DC-DC converters
- Polarity protection systems
Procurement Notes
Verify the specific ordering suffix and manufacturing lot date codes upon receipt to ensure compliance with project requirements. Confirm that the received components match the specified SQ-MELF package dimensions and electrical parameters outlined in the official datasheet. Check for any product change notifications or material declarations relevant to the production batch before integration into final assemblies.
Selection Notes
Select this component when a hermetically sealed, surface-mount fast recovery diode is required for high-reliability environments. The 150 V reverse voltage and 3 A current ratings define its operational limits. Consider the 30 ns recovery time for high-speed switching needs. Ensure the PCB footprint matches the SQ-MELF package specifications provided in the mechanical drawings.
Part Context
This part belongs to the 1N58xx series of ultrafast recovery rectifiers manufactured by Microchip Technology. The series includes various voltage ratings and package options, including through-hole and surface mount configurations. The US suffix typically denotes the surface mount MELF package variant, distinguishing it from axial leaded versions like the standard 1N5811.
Replacement Considerations
Direct substitutes include JAN1N5811US for military-grade specifications. Commercial equivalents may be found among other manufacturers offering 150V, 3A fast recovery diodes in SQ-MELF packages, provided pinout and thermal characteristics are verified.
