1N5813

Overview

The 1N5813 is a silicon ultrafast recovery rectifier diode manufactured by Microchip Technology. It features a single-phase, one-element configuration housed in a hermetically sealed DO-4 metal package. The device supports an average forward current of 20A and a maximum repetitive reverse voltage of 75V. It operates within a junction temperature range of -65°C to 175°C and includes a maximum non-repetitive peak forward surge current rating of 80A.

Feature Summary

• Military qualified for high-reliability applications where failure is not tolerated
• Ultrafast recovery characteristics with switching times less than 100ns
• Hermetically sealed DO-4 metal package construction

Applications

• High-reliability military systems
• Ultrafast recovery rectification circuits
• High-efficiency power conversion

Procurement Notes

Verify the manufacturer origin, as the 1N5813 has been produced by multiple vendors including SSDI and Microsemi. Confirm that the specific unit acquired meets the required military qualification standards if intended for high-reliability use. Ensure the DO-4 package type matches the design requirements.

Selection Notes

Select this component when ultrafast recovery performance is critical for reducing switching losses. The 75V reverse voltage rating suits low-voltage high-current applications. The hermetic DO-4 package provides environmental protection suitable for harsh operating conditions compared to standard plastic packages.

Part Context

This part belongs to the 1N58xx series of ultrafast recovery rectifiers. The series offers various voltage ratings while maintaining consistent current handling and fast recovery characteristics. These diodes are designed to replace slower standard recovery devices in high-frequency applications.

Replacement Considerations

Public confirmed substitute part numbers include 1N5813R.