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The Taiwan Semiconductor 1N5817 is a single Schottky rectifier housed in the DO-41 axial through-hole package. It features a maximum repetitive peak reverse voltage of 20 V and an average forward rectified current rating of 1 A. The device exhibits a maximum forward voltage drop of 750 mV at rated current and supports a maximum non-repetitive peak forward surge current of 30 A. Operating junction temperatures range from -65 °C to +125 °C, with a specified maximum reverse leakage current of 1 mA at 20 V.
Verify manufacturer attribution carefully as multiple vendors produce this standard part number. Confirm RoHS compliance status and specific datasheet revisions directly with the supplier. Ensure the ordered component matches the required electrical parameters for your circuit design before finalizing procurement.
Select this component for low voltage applications requiring fast switching speeds and minimal conduction losses. The DO-41 package provides reliable through-hole mounting for general-purpose rectification. Evaluate thermal management requirements based on the specified junction temperature limits and ambient operating conditions.
This component belongs to the 1N581x series of silicon Schottky rectifiers designed for low voltage, high frequency power conversion. The series utilizes Schottky technology to achieve superior performance compared to standard PN junction diodes in similar voltage and current ratings.
The maximum repetitive peak reverse voltage (VRRM) is 20 V.
Yes, the datasheet specifies avalanche capability for this component.