1N5818H

Overview

The 1N5818H is a silicon Schottky barrier rectifier manufactured by Taiwan Semiconductor Corporation. It features a single element configuration housed in the DO-204AL (DO-41) axial leaded package. The device is rated for a maximum average forward rectified current of 1 A and a maximum repetitive peak reverse voltage of 30 V. Key electrical characteristics include a low forward voltage drop, typically 0.45 V at 1 A, and a high surge non-repetitive peak forward current capability of 25 A. The component supports an operating junction temperature range from -65 °C to +175 °C, ensuring reliability in demanding thermal environments.

Feature Summary

• Schottky barrier construction provides extremely fast switching speeds with negligible reverse recovery time.
• Low forward voltage drop minimizes conduction losses and improves overall system efficiency.
• Guard ring design offers protection against overvoltage transients and enhances ruggedness.
• High thermal stability allows operation at elevated junction temperatures up to 175 °C.

Applications

• Free wheeling diodes in DC-to-DC converters
• Polarity protection circuits in power supplies
• Low voltage high frequency inverters
• Small battery chargers

Procurement Notes

Verify the specific suffix 'H' against the manufacturer's official datasheet to confirm exact mechanical or material specifications, as standard 1N5818 variants may differ. Ensure the component meets RoHS compliance requirements if mandated by your project standards. Cross-reference the JEDEC DO-41 package dimensions with your PCB footprint library to guarantee accurate physical integration during the procurement phase.

Selection Notes

Select this component when low forward voltage drop and high switching speed are critical for efficiency in low-voltage applications. The 30 V rating suits systems where reverse voltage peaks remain below this threshold. Consider the 1 A current limit for load requirements and verify that the DO-41 through-hole package aligns with the assembly process. The extended 175 °C junction temperature capability makes it suitable for high-temperature industrial environments compared to standard silicon rectifiers.

Part Context

The 1N5818H belongs to the widely recognized 1N58xx series of Schottky rectifiers, which are industry-standard components for power management. Manufactured by Taiwan Semiconductor Corporation, this part leverages mature silicon Schottky technology to deliver reliable performance. It serves as a direct replacement for generic 1N5818 devices from other manufacturers, maintaining pin compatibility and electrical equivalence within the DO-41 axial package form factor.

Replacement Considerations

Direct substitutes include the standard 1N5818 from manufacturers such as Vishay, Microchip, and STMicroelectronics. Verify that alternative sources offer equivalent 30 V reverse voltage and 1 A forward current ratings. Ensure the replacement maintains the DO-41 package style and similar forward voltage characteristics to preserve circuit performance without redesign.