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The Microchip Technology 1N5819-1/TR is a Schottky barrier rectifier designed for low voltage and high frequency applications. It features an average forward current of 1 A and a maximum repetitive reverse voltage of 45 V. The device exhibits a typical forward voltage drop of 490 mV at 1 A and a maximum reverse leakage current of 50 uA at 45 V. It supports a forward surge current of 25 A and operates within a junction temperature range of -65°C to +150°C. Packaged in the DO-213AB (MELF) format, it is suitable for polarity protection and free-wheeling duties.
Verify the specific suffix against official Microchip documentation to confirm the MELF package type and military-grade qualification status. Ensure the ordering part number matches the required RoHS compliance or exemption status. Cross-reference datasheet revisions to confirm any changes in mechanical dimensions or testing standards before finalizing procurement orders.
Select this component when a ruggedized Schottky rectifier with MIL-PRF-19500/586 compliance is required for surface mount designs. Compare the 45 V rating against standard 40 V variants to ensure adequate voltage headroom. Evaluate the thermal management requirements based on the 1 A continuous current capability and the specific thermal resistance of the MELF package.
This part belongs to the 1N5819 series of axial and surface mount Schottky rectifiers manufactured by Microchip Technology. While the standard 1N5819 typically utilizes a DO-41 through-hole package, the -1/TR suffix indicates a specific variant often associated with military specifications and alternative packaging such as MELF. It serves as a high-reliability alternative for general-purpose rectification tasks.
JAN1N5819UR-1/TR: Verified equivalent from Microchip featuring identical electrical ratings and military qualification in a MELF package.