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The Taiwan Semiconductor 1N5819HB0G is a Schottky Barrier Rectifier rated for 1 A average forward current and 40 V repetitive peak reverse voltage. It utilizes a metal-to-silicon junction with epitaxial construction and oxide passivation, housed in the DO-204AL (DO-41) axial package. The device features a low forward voltage drop of 0.60 V maximum at 1 A and supports a surge current of 30 A. It operates within a junction temperature range of -55°C to +125°C and includes guard ring protection against overvoltage.
Verify the specific suffix 'HB0G' against official ordering tables to confirm packaging details such as tape and reel or ammo box quantities. Confirm RoHS compliance and halogen-free status per IEC 61249-2-21 requirements. Ensure the component meets JESD 201 class 2 whisker test specifications before integration into designs requiring long-term stability.
Select this component for applications requiring low switching losses and fast recovery characteristics typical of Schottky diodes. The DO-204AL package suits through-hole mounting. Consider the thermal resistance values when designing heat dissipation strategies. Verify that the 40 V rating aligns with the circuit's peak reverse voltage requirements.
This part belongs to the 1N5817–1N5819 series of Schottky Barrier Rectifiers from Taiwan Semiconductor. The series covers voltage ratings from 20 V to 40 V. The 'H' suffix indicates AEC-Q101 qualification, while the 'B0G' suffix relates to specific manufacturing or packaging configurations defined by the manufacturer.
Cross-reference with other manufacturers' 1N5819 equivalents ensuring identical DO-204AL packaging and 1 A/40 V ratings. Verify that substitute parts meet the same AEC-Q101 automotive qualification if required by the application.