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The Taiwan Semiconductor Corporation 1N5820H is a Schottky barrier rectifier featuring a 3.0 A average forward current and a 20 V repetitive peak reverse voltage. Housed in the DO-201AD (DO-27) axial leaded package, it utilizes silicon technology with an isolated cathode configuration. The device exhibits a maximum forward voltage of 0.475 V at rated current and supports a non-repetitive peak forward surge current of 80 A. It operates within a junction temperature range of -65 °C to 125 °C and complies with RoHS standards.
Verify the specific suffix 'H' against the manufacturer's official datasheet to confirm exact electrical tolerances and packaging specifications. Ensure the component matches the required DO-201AD form factor and that the RoHS compliance status aligns with project constraints before finalizing procurement.
Select this component for applications requiring low forward voltage drop and high surge current handling in a through-hole package. Compare the 0.475 V forward voltage and 80 A surge rating against circuit demands. Ensure the 20 V reverse voltage rating exceeds the peak inverse voltage present in the target application environment.
This part belongs to the 1N5820 series of Schottky Barrier Rectifiers manufactured by Taiwan Semiconductor Corporation. The series typically includes variants such as 1N5820, 1N5821, and 1N5822, differentiated primarily by their reverse voltage ratings while maintaining similar current handling capabilities in the DO-201AD package.
Direct substitutes include Vishay SB320-E3/54G and onsemi 1N5820-E3/54GICT. Verify pinout compatibility and thermal performance when swapping manufacturers.