1N5821H

Overview

The 1N5821H is a silicon Schottky barrier rectifier manufactured by Taiwan Semiconductor Corporation. It features a single diode configuration housed in the DO-201AD axial through-hole package. The device is rated for a maximum average forward rectified current of 3 A and a maximum repetitive peak reverse voltage of 30 V. Key electrical characteristics include a low forward voltage drop, high surge current capability, and an operating junction temperature range from -65 °C to +125 °C. The component utilizes guardring technology for overvoltage protection and is designed for high-frequency applications requiring minimal conduction losses.

Feature Summary

• Guardring structure provides enhanced overvoltage protection capabilities
• Low forward voltage drop minimizes conduction losses during operation
• High forward surge current capability supports transient load conditions
• Extremely fast switching speed suitable for high-frequency circuits

Applications

• Low voltage high frequency inverters
• Free wheeling diode applications
• Polarity protection circuits
• Small battery chargers

Procurement Notes

Verify the specific suffix 'H' against the manufacturer's official datasheet to confirm if it denotes a specialized variant or packaging option distinct from the standard 1N5821. Ensure the selected component matches the required RoHS compliance status and lead plating specifications for your assembly process. Cross-reference the ordering code with Taiwan Semiconductor documentation to avoid confusion with similar series parts.

Selection Notes

Select this component when a 3 A Schottky rectifier with a 30 V reverse voltage rating is required. The DO-201AD package is appropriate for through-hole mounting where higher current handling is needed compared to smaller surface-mount packages. Consider the low forward voltage characteristic for efficiency-critical designs operating at low output voltages.

Part Context

This part belongs to the 1N582x series of Schottky barrier rectifiers produced by Taiwan Semiconductor. The series includes variants with different reverse voltage ratings, such as the 1N5820 (20 V) and 1N5822 (40 V). These devices share common mechanical dimensions and thermal characteristics but differ in their blocking voltage capabilities and specific forward voltage drops.

Replacement Considerations

Direct substitutes include the Vishay 1N5821 and Microsemi 1N5821E3. When replacing, verify that the alternative part maintains the same DO-201AD package style and meets the 3 A current and 30 V voltage requirements.