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The Microchip Technology 1N5821US/TR is a Schottky barrier rectifier designed for surface-mount applications. It features a maximum average forward rectified current of 3A and a maximum repetitive peak reverse voltage of 30V. The device utilizes an SQ-MELF package configuration. Electrical characteristics include a low forward voltage drop of 500mV at 3A and a maximum reverse leakage current of 100µA at 30V. The component supports a junction temperature range from -65°C to 125°C.
Verify the specific suffix against official Microchip documentation to confirm tape-and-reel packaging and exact electrical tolerances. Confirm RoHS compliance status as manufacturing processes may vary by production site. Ensure the supplier provides valid traceability data for quality assurance purposes before finalizing procurement orders.
Select this component when a surface-mount Schottky rectifier with 3A current handling is required. Compare the 30V rating against circuit peak inverse voltage requirements. Evaluate the SQ-MELF footprint compatibility with existing PCB layouts. Consider thermal management needs given the high current capability and operating temperature limits.
This part belongs to the standard 1N58xx series of Schottky rectifiers, widely used in general-purpose power conversion. The US designation indicates a specific molded leadless package variant manufactured by Microchip. It serves as a direct replacement for through-hole equivalents in space-constrained designs requiring efficient rectification.
Cross-reference with other manufacturers' 1N5821 variants ensuring identical 30V/3A ratings and compatible SQ-MELF footprints. Verify pinout orientation and thermal resistance values match the original design specifications.