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The Vishay General Semiconductor - Diodes Division 1N5822-E3/51 is a Schottky barrier rectifier housed in the DO-201AD axial package. It features a maximum repetitive peak reverse voltage of 40 V and supports a maximum average forward rectified current of 3.0 A at 95 °C lead temperature. The device exhibits a low instantaneous forward voltage drop of 0.525 V at 3.0 A and handles an 80 A non-repetitive peak forward surge current. Operating junction temperatures range from -65 °C to +125 °C, with a typical thermal resistance of 40 °C/W.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific ordering suffixes that may alter packaging or commercial grade specifications. Validate datasheet revision dates against procurement documentation to ensure accurate technical parameters are referenced during integration.
Select this component for designs requiring low conduction losses and high-frequency operation within a 40 V reverse voltage limit. Ensure thermal management accommodates the specified junction temperature range and verify lead length requirements for derating curves. Confirm compatibility with solder dip processes up to 275 °C for ten seconds per standard testing protocols.
This part belongs to the 1N5820 thru 1N5822 series of Schottky Barrier Rectifiers manufactured by Vishay General Semiconductor. The E3 suffix indicates RoHS compliance and adherence to WEEE directives. The base product number 1N5822 specifically denotes the 40 V rating variant within this family of axial power diodes designed for switch mode power supplies.
Direct substitutes include the 1N5822-E3/54 and 1N5822-E3/73 variants from Vishay. Cross-manufacturer equivalents such as the onsemi 1N5822G offer similar electrical characteristics but require verification of mechanical dimensions and thermal performance data.