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The Diodes Incorporated 1N5822-T is a silicon Schottky barrier rectifier housed in the DO-201AD axial package. It provides a maximum average rectified output current of 3.0 A and a peak repetitive reverse voltage of 40 V. The device features a low forward voltage drop, specified at 0.525 V at 3.0 A and 0.950 V at 9.4 A. It supports a non-repetitive peak forward surge current of 80 A and operates within a junction temperature range of -65 °C to +125 °C.
Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm the specific suffix designation matches project requirements. Check datasheet revisions for updated electrical parameters. Ensure storage conditions align with semiconductor preservation standards. Validate supplier documentation against manufacturer specifications before integration.
Evaluate thermal resistance values when designing heat dissipation strategies. Consider derating curves for ambient temperature variations. Compare forward voltage drops against system efficiency targets. Assess surge current capabilities relative to circuit load profiles. Verify package compatibility with existing PCB footprints and mounting constraints.
This component belongs to the 1N582x series of Schottky barrier rectifiers from Diodes Incorporated. The series includes variants with different reverse voltage ratings while maintaining consistent current handling capabilities. These devices are engineered for general-purpose rectification in power supply applications requiring fast switching and low noise performance.
Cross-reference with other manufacturers offering equivalent DO-201AD packaged Schottky diodes. Verify matching electrical parameters including reverse voltage, forward current, and package dimensions. Ensure functional compatibility regarding switching speed and thermal characteristics during substitution.