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Product Detailed Parameters
- Description：DIODE SCHOTTKY 20V 25A DO4
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：20 V
- Current - Average Rectified (Io)：25A
- Voltage - Forward (Vf) (Max) @ If：580 mV @ 25 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：2 mA @ 20 V
- Capacitance @ Vr, F：-
- Mounting Type：Chassis, Stud Mount
- Package / Case：DO-203AA, DO-4, Stud
- Supplier Device Package：DO-4
- Operating Temperature - Junction：-55°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor 1N5829 is a silicon power Schottky diode housed in a DO-4 stud mount package. It supports a continuous forward current of 25 A and offers repetitive peak reverse voltage ratings ranging from 20 V to 40 V across the series. The device features a junction-to-case thermal resistance of 1.8 °C/W and operates within a temperature range of -55 °C to +150 °C. Standard polarity designates the stud as the cathode, while reversed polarity variants designate it as the anode.
Feature Summary
- High surge capability for handling transient currents
- Not sensitive to electrostatic discharge
- Low forward voltage drop characteristics
Applications
- Free wheeling applications
- Polarity protection circuits
- Low voltage high frequency inverters
Procurement Notes
Verify the specific voltage rating required, as the 1N5829 designation covers a range up to 40 V. Confirm whether standard or reversed polarity is needed based on the mounting orientation. Check for RoHS compliance status and ensure the DO-4 package dimensions match the heat sink interface requirements before ordering.
Selection Notes
Select this component for high-current DC-DC conversion where low conduction losses are critical. The stud mount configuration facilitates direct thermal management to chassis heatsinks. Ensure the operating junction temperature remains within the specified limits during peak load conditions to maintain reliability.
Part Context
This part belongs to the 1N58xx series of silicon Schottky rectifiers manufactured by GeneSiC Semiconductor. The series includes variants with different reverse voltage ratings but shares similar current handling and packaging characteristics. These devices are designed for robust performance in industrial and automotive power electronics environments.
Replacement Considerations
Cross-reference with other manufacturers' DO-4 Schottky diodes rated for 25 A and compatible voltage levels. Verify that substitute parts meet the same thermal resistance and surge current specifications to ensure equivalent circuit performance.
