1N5829

Overview

The Microchip Technology 1N5829 is a Schottky barrier rectifier featuring guard ring protection. It provides a low forward voltage drop and supports an average forward current of 25 Amperes with a junction temperature rating of 125°C. The device offers a maximum repetitive peak reverse voltage (VRRM) ranging from 20 to 40 volts, depending on the specific variant configuration.

Feature Summary

• Schottky barrier construction for efficient rectification
• Guard ring protection for enhanced reliability
• Low forward voltage drop characteristics

Applications

• Rectifiers in low voltage high frequency inverters
• Free wheeling diodes in switching circuits
• Switchmode power supply rectification

Procurement Notes

Verify the specific VRRM rating required for your application, as the 1N5829 designation covers variants with 20V, 30V, or 40V ratings. Confirm package type compatibility, as sources indicate DO-4 stud mount configurations. Ensure RoHS compliance status matches project requirements before ordering.

Selection Notes

Select this component when high efficiency at low voltages is critical due to its Schottky technology. The 25A current rating suits high-power applications. Verify thermal management capabilities for the 125°C junction temperature limit. Compare against standard PN junctions for improved speed and reduced conduction losses.

Part Context

This part belongs to the 1N58xx series of Schottky rectifiers manufactured by Microchip Technology. It utilizes silicon technology and is designed for robust performance in power conversion environments. The series is known for combining high current handling with fast switching speeds typical of Schottky barriers.

Replacement Considerations

Cross-reference with other manufacturers' 1N5829 equivalents ensuring identical 25A current and voltage ratings. Verify pinout and mechanical dimensions match the existing DO-4 footprint. Check if alternative brands offer compatible guard ring protection features.