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The GeneSiC Semiconductor 1N5831R is a silicon power Schottky rectifier housed in a DO-4 stud mount package. It features a maximum repetitive peak reverse voltage of 20 V and a continuous forward current rating of 25 A. The device exhibits a maximum forward voltage of 0.58 V at 25 A and supports a surge non-repetitive forward current of 800 A. Thermal resistance from junction to case is specified at 1.8 °C/W. Operating temperature ranges from -55 °C to +150 °C, with the 'R' suffix indicating reversed polarity where the stud functions as the anode.
Verify the specific electrical ratings against the official datasheet before integration. Confirm that the reversed polarity configuration aligns with the circuit design requirements. Ensure proper mounting torque and thermal interface materials are used to maintain the specified thermal resistance. Check for any recent discontinuation notices or alternative part recommendations from the manufacturer.
Select this component for applications requiring robust performance in low voltage environments. The stud mount package facilitates direct heat sinking to chassis or cold plates. Consider the thermal resistance when designing the cooling system to ensure junction temperatures remain within safe operating limits under full load conditions.
This device belongs to the 1N58 series of silicon power Schottky rectifiers. It shares similar electrical characteristics with the 1N5829 and 1N5830 variants but differs in packaging orientation due to the reversed polarity designation. The series is designed for general purpose rectification in industrial and commercial power supplies.
Direct substitutes include the 1N5829R and 1N5830R which share identical electrical specifications and package dimensions. Verify pinout compatibility and thermal requirements when swapping between these variants.