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The Microchip Technology 1N6079US/TR is a surface-mount ultrafast recovery rectifier diode rated for 50 V working peak reverse voltage and 12.0 A average rectified forward current at TEC=+70°C. It features a maximum forward voltage of 1.50 V at 37.7 A, a maximum reverse leakage current of 10.0 μA at VRWM, and a maximum reverse recovery time of 30 ns. The device supports a peak forward surge current of 175 A and operates within a junction temperature range of -65°C to +155°C.
Verify the specific datasheet revision and manufacturer documentation before integration. Confirm that the component meets all required environmental and reliability standards for the intended application. Ensure compatibility with the specified mounting and soldering procedures outlined in the official specifications.
Select this component for designs requiring high current handling and rapid switching speeds in a hermetically sealed surface-mount package. Consider the thermal management requirements associated with the specified power dissipation and operating temperature range when designing the circuit layout.
This part belongs to the 1N6073US through 1N6081US series of ultrafast recovery rectifiers. These devices are designed for high-reliability environments and offer various current ratings and voltage options within the same family structure.
Consult the official datasheet for equivalent axial-leaded versions or alternative parts within the same series that match the required voltage and current specifications.