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The Microchip Technology 1N6623US/TR is a surface-mount standard rectifier diode designed for high-voltage applications. It features a maximum repetitive peak reverse voltage of 880 V and an average forward rectified current of 1 A. The device utilizes the D-5A SQ-MELF package, providing robust performance in compact designs. It operates within a junction temperature range of -65°C to +150°C and exhibits a maximum forward voltage drop of 1.6 V at the rated current.
Verify the specific datasheet version and manufacturing origin before procurement, as Microchip sources components from multiple facilities. Confirm that the D-5A package dimensions align with your PCB footprint requirements. Ensure compliance with project-specific material declarations, noting that this component may not meet all RoHS directives depending on the manufacturing date code.
Select this component when a high-voltage standard recovery diode is required in a small surface-mount form factor. The 1 A current rating suits moderate power applications where space is constrained. Compare against through-hole alternatives if higher current handling or different thermal dissipation characteristics are needed for the specific circuit design.
This part belongs to the 1N66xx series of high-voltage rectifiers manufactured by Microchip Technology. The US suffix indicates a specific lead-free plating option, while TR denotes tape-and-reel packaging. This series is engineered for reliability in aerospace, military, and industrial sectors where long-term stability under high stress is critical.
Direct replacements include other 1N6623 variants such as JANTXV1N6623US/TR for enhanced radiation hardness. Verify pinout compatibility and ensure substitute parts match the 880 V / 1 A specifications and D-5A package constraints.