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The Microchip Technology 1N6624US/TR is a military-qualified ultrafast recovery rectifier diode designed for high-reliability surface-mount applications. It features a single configuration with a maximum repetitive peak reverse voltage of 990 V and an average forward rectified current of 3 A. The device exhibits a fast recovery time of 50 ns and a low reverse leakage current of 2 µA at rated voltage. Packaged in the SQ-MELF (D-5B) form factor, it operates within a junction temperature range of -65°C to +150°C and complies with MIL-PRF-19500/585 standards.
Verify that the specific suffix matches the required package and qualification level. Confirm RoHS status as non-compliant for restricted substance projects. Ensure supply chain sources provide valid military lot traceability and certification documents upon delivery.
Select this component when a 990 V reverse voltage rating and 3 A continuous current are required in a surface-mount format. The ultrafast recovery profile distinguishes it from standard rectifiers. Verify thermal management requirements for the SQ-MELF package under maximum load conditions.
This part belongs to the 1N6624 series of ultrafast recovery rectifiers manufactured by Microchip Technology. It serves as a surface-mount alternative to through-hole equivalents, maintaining the electrical performance necessary for demanding industrial and defense electronics while enabling automated assembly processes.
Direct substitutes include other military-qualified ultrafast rectifiers in the SQ-MELF package with matching 990 V and 3 A ratings. Verify pinout compatibility and thermal resistance specifications before substitution.