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The Microchip Technology 1N6672R is a silicon rectifier diode array housed in a TO-254 package. It features a maximum DC reverse voltage of 300 V and an average rectified forward current of 15 A per diode. The component exhibits a fast recovery characteristic with a reverse recovery time of 35 ns. Forward voltage is specified at 1.35 V when tested at 10 A. Reverse leakage current is limited to 50 µA at a reverse voltage of 240 V. The device utilizes a common cathode configuration for dual-diode applications.
Verify the specific suffix designation against official Microchip documentation to confirm pinout configuration and package variant. Ensure that the procurement source provides valid traceability for the semiconductor material. Confirm compliance requirements such as RoHS status prior to integration into final assemblies.
Select this component when circuit design requires a 300 V blocking voltage with 15 A continuous current handling. The 35 ns reverse recovery time makes it appropriate for frequencies exceeding standard soft recovery limits. Evaluate thermal management requirements based on the TO-254 package thermal resistance specifications.
This part belongs to the Microchip Technology discrete semiconductor product line, specifically within the rectifier diode array category. It serves as a replacement or alternative for legacy hermetic-style rectifiers adapted for modern surface-mount or through-hole assembly processes using the TO-254 form factor.
Public confirmed substitute part numbers are not available in the provided documentation. Verify electrical parameter compatibility including peak inverse voltage and forward current ratings before substituting with generic equivalents.