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The 1N6767 is a dual ultrafast power rectifier manufactured by Microchip Technology. It features a common cathode configuration housed in a TO-254AA (TO-254) package. The device supports a maximum repetitive peak reverse voltage of 600 V and a continuous forward current of 12 A. It exhibits a fast recovery time of 35 ns with low junction capacitance. The component is hermetically sealed, suitable for high-reliability applications.
Verify the specific ordering suffix to confirm the required level of product assurance, such as JAN, JANTX, JANTXV, or JANS screening levels. Ensure the package variant matches the thermal and mechanical requirements of the target assembly. Confirm compliance with MIL-PRF-19500/645E specifications if military-grade performance is mandated for the application environment.
Select this component when ultrafast recovery times are critical to minimize switching losses and electromagnetic interference. The 600 V rating provides adequate margin for standard industrial bus voltages. Consider the TO-254AA package constraints for PCB layout and thermal dissipation. Evaluate the need for hermetic sealing based on the operating environment's humidity and contamination exposure.
This part belongs to the family of silicon power rectifiers designed for high-performance applications. It adheres to MIL-PRF-19500/645E standards, offering multiple quality assurance levels. The device complements other ultrafast diodes in the portfolio, providing a balance of speed, current handling, and voltage blocking capabilities for demanding power electronics designs.
Direct substitutes include the 1N6766 and 1N6767R variants within the same manufacturer's lineup. Verify that alternative parts match the 600 V reverse voltage and 12 A forward current ratings. Ensure the replacement maintains the TO-254AA footprint and hermetic seal requirements if specified in the original design.