1N6841

Overview

The Microchip Technology 1N6841 is a silicon Schottky rectifier featuring a dual anode common cathode configuration. It operates with a maximum repetitive reverse voltage of 45 V and supports a continuous forward current of 10 A. The device exhibits a typical forward voltage drop of 750 mV at rated current, with a maximum reverse leakage current of 100 uA. It withstands a non-repetitive peak forward surge current of 200 A. The component is designed for surface mount installation in an SMD-0.5-3 package and functions reliably within a temperature range of -55 C to +150 C junction temperature.

Feature Summary

• Dual anode common cathode topology enables efficient power conversion in bridge or full-wave configurations.
• Schottky barrier construction provides low forward voltage drop for improved energy efficiency.
• Silicon technology ensures robust performance under high thermal stress conditions.

Applications

• DC-DC converter circuits requiring low loss rectification
• Power supply freewheeling diodes
• Reverse polarity protection schemes

Procurement Notes

Verify the specific ordering suffix against the manufacturer datasheet to confirm package type and tape/reel specifications. Confirm RoHS compliance status as indicated in official documentation. Ensure the supplier provides valid traceability records matching the Microchip Technology part number. Check for any recent product change notices affecting assembly sites or materials before finalizing procurement orders.

Selection Notes

Select this component when a low forward voltage drop is critical for system efficiency. The dual anode common cathode arrangement simplifies circuit design for specific rectification topologies. Ensure the operating environment stays within the specified -55 C to +150 C junction temperature limits. Verify that the 45 V reverse voltage rating exceeds the maximum peak inverse voltage expected in the application circuit.

Part Context

The 1N6841 belongs to the standard Schottky rectifier family manufactured by Microchip Technology. It utilizes silicon planar die technology for reliable operation. The component is categorized under discrete semiconductor diodes and rectifiers. It serves as a specialized solution for applications demanding fast switching characteristics and low conduction losses compared to standard PN junction diodes.

Replacement Considerations

Consult the official Microchip Technology datasheet for verified cross-reference part numbers. Do not substitute with generic equivalents without verifying electrical parameters such as forward voltage and reverse leakage current. Ensure any replacement maintains the dual anode common cathode configuration and compatible package dimensions.