SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Nexperia 1PS66SB17 is a triple isolated planar low capacitance Schottky barrier diode housed in an SOT666 ultra-small flat lead Surface-Mounted Device plastic package. It contains three independent diodes with a maximum forward current of 30 mA and a reverse voltage rating of 4 V. The device exhibits very low diode capacitance, typically 0.8 pF at zero bias and 1 MHz, making it suitable for high-frequency applications. Forward voltage characteristics range from 300 mV to 600 mV depending on the forward current level. The component operates within a junction temperature range up to 150 °C and features a thermal resistance from junction to ambient of 700 K/W.
Verify the specific ordering suffix matches the required packaging format before procurement. Confirm that the application environment does not require automotive qualification, as this product is explicitly designated as non-automotive qualified. Ensure design margins account for the specified thermal resistance and absolute maximum ratings to prevent device stress.
Select this component when circuit design requires multiple isolated Schottky diodes in a minimal footprint. The low capacitance specification makes it appropriate for RF signal processing and high-speed digital clamping where parasitic effects must be minimized. Verify that the 4 V reverse voltage rating aligns with the peak inverse voltage present in the target circuit topology.
This device belongs to Nexperia's portfolio of low capacitance Schottky barrier diodes designed for compact surface-mount implementations. It utilizes the SOT666 package, which provides a 6-lead configuration with a 0.5 mm pitch. The product data sheet indicates a revision history involving the separation from family data sheets and the removal of packing information in recent updates.
Publicly confirmed substitute part numbers are not available in the provided documentation.