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The 1SS315TPH3F is a PIN diode switch manufactured by Toshiba Semiconductor and Storage, designed for very high frequency applications. It features a maximum reverse voltage of 30 V and a typical series resistance of 0.6 Ω. The device exhibits a maximum total capacitance of 1.2 pF and supports a maximum forward current of 100 mA. It operates within a junction temperature range of -55 °C to 125 °C and is housed in a compact SOD-323 package.
Verify the component authenticity by checking the manufacturer's marking code against official documentation. Ensure the ordering suffix matches the required tape-and-reel configuration. Confirm compliance with RoHS standards as indicated in the product specifications before integration into production.
Select this component when low series resistance and small package size are critical for VHF applications. Compare the 1.2 pF maximum capacitance against circuit requirements to ensure signal integrity. Verify that the 30 V reverse voltage rating aligns with the peak operating voltages in the target design.
This part belongs to Toshiba's silicon epitaxial planar diode family, specifically engineered for RF switching. It complements other components like the 1SS381 in tuner applications, offering similar performance characteristics in a standardized surface-mount form factor for consistent manufacturing processes.
Direct substitutes may include other PIN diodes from Toshiba with identical pinout and electrical ratings. Verify package compatibility and thermal characteristics before substitution. Cross-reference datasheets to ensure equivalent series resistance and capacitance values.