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The onsemi 1SV234-TB-E is a dual series PIN diode designed for VHF, UHF, and AGC applications. It integrates two elements in an ultrasmall CP package (SC-59/SOT-23) to facilitate high-density mounting. Key electrical specifications include a maximum reverse voltage of 50V and a forward current rating of 50mA. The device exhibits a typical interterminal capacitance of 0.23pF at 50V reverse bias and 1MHz frequency. At 100MHz with a 10mA forward current, the typical series resistance is 5Ω. The junction temperature range extends up to 125°C.
Verify the specific ordering suffix TB-E corresponds to the embossed taping specification containing 3,000 pieces per reel. Confirm the package designation CP aligns with SC-59 or SOT-23 physical dimensions. Ensure the Pb-free status matches project requirements. Validate that the 50V reverse voltage and 50mA forward current ratings satisfy the target circuit's stress conditions before finalizing procurement orders.
Select this component when low interterminal capacitance and small series resistance are critical for VHF/UHF performance. The dual-series internal structure reduces board space compared to discrete solutions. Verify that the 50V reverse voltage limit accommodates peak circuit voltages. Ensure the operating environment remains within the -55°C to +125°C storage and junction temperature limits defined in the absolute maximum ratings.
This part belongs to the 1SV234 series of dual series PIN diodes manufactured by onsemi. It utilizes the CP package format, which is compatible with JEITA/JEDEC standards such as SC-59, TO-236, and SOT-23. The device is specifically engineered for applications requiring minimal footprint and high-frequency switching characteristics.
Direct substitutes must match the dual-series PIN topology, 50V reverse voltage rating, and SOT-23/CP package outline. Verify equivalent capacitance and series resistance values at comparable frequencies to maintain circuit performance integrity.
The typical interterminal capacitance is 0.23 pF, measured at a reverse voltage of 50V and a frequency of 1MHz.
The device contains two diodes connected in series. Pin 1 is the Anode, Pin 2 is the Cathode, and Pin 3 serves as the common Cathode/Anode connection point between the two internal elements.
The maximum allowable power dissipation is 150 mW at an ambient temperature of 25°C.