SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi 1SV263-TL-E is a silicon planar varactor diode designed for high-frequency tuning applications. It features a maximum DC reverse voltage of 30 V and a capacitance range from 0.5 pF to 4.0 pF at a reverse bias of 0 V. The device operates within a temperature range of -55 °C to +150 °C, with a maximum junction temperature of 150 °C. Packaged in the SOD-323 surface-mount format, it supports a maximum forward current of 10 mA and maintains low series resistance. These specifications make it suitable for RF circuits requiring precise capacitance control under varying voltage conditions.
Verify the specific suffix TL-E against official datasheets to confirm packaging details and compliance status. Ensure that the sourcing channel provides traceability documentation matching the manufacturer's quality standards. Cross-reference the component marking with the official part identification guide to prevent counterfeit substitution during acquisition.
Select this component when a compact SOD-323 footprint is required for high-frequency tuning applications. Evaluate the capacitance ratio and Q-factor requirements against the specified 0.5 pF to 4.0 pF range. Confirm that the 30 V reverse voltage rating aligns with the circuit's maximum operating bias levels to ensure reliable long-term operation.
This varactor diode belongs to onsemi's portfolio of discrete semiconductor devices focused on radio frequency and microwave applications. It serves as a voltage-dependent capacitor element within active electronic circuits. The component is distinct from standard rectifier or Zener diodes due to its intentional utilization of junction capacitance variation for signal processing functions.
Consult official replacement guides for equivalent varactor diodes with matching capacitance ranges and package dimensions. Verify electrical compatibility regarding breakdown voltage and series resistance before substituting.