1SV325,H3F

Overview

The Toshiba 1SV325 is a silicon epitaxial planar varactor diode designed for TCXO and VCO applications. It features a high capacitance ratio of 4.3 (typical) measured at C1V/C4V, enabling effective tuning performance in compact circuits. The device exhibits low series resistance of 0.4 Ω (typical) at 100 MHz, which contributes to improved quality factor. Electrical characteristics include a reverse voltage rating of 10 V and a maximum reverse current of 3 nA at 10 V. Capacitance values range from 49.5 pF maximum at 1 V to 12 pF maximum at 4 V, both tested at 1 MHz with a 500 mVrms signal level. The component operates within a junction temperature range up to 125 °C.

Feature Summary

• High capacitance ratio optimized for efficient frequency tuning in oscillator circuits
• Low series resistance characteristic supporting high Q-factor performance
• Silicon epitaxial planar construction ensuring stable electrical properties

Applications

• Temperature Compensated Crystal Oscillator (TCXO) designs
• Voltage Controlled Oscillator (VCO) implementations
• Compact tuner circuit integration

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm package type and reel specifications. Ensure compliance with RoHS directives and environmental regulations applicable to your region before procurement. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines and failure rate data relevant to your operating conditions.

Selection Notes

Select this component when a high capacitance ratio is required for wide tuning ranges in small form factor oscillators. Evaluate the low series resistance specification for applications demanding minimal insertion loss at RF frequencies. Confirm that the 10 V reverse voltage rating aligns with the maximum bias voltages present in the target circuit design.

Part Context

The 1SV325 belongs to Toshiba's line of silicon epitaxial planar varactor diodes. This family focuses on providing reliable tuning elements for radio frequency and microwave applications. The device utilizes standard semiconductor manufacturing processes to deliver consistent capacitance-voltage characteristics suitable for mass production in consumer and industrial electronics.

Replacement Considerations

Consult Toshiba technical support for verified equivalent part numbers. Cross-referencing requires matching capacitance ratios, series resistance values, and reverse voltage ratings to ensure functional compatibility in existing oscillator designs.

FAQ

What is the typical capacitance ratio for the 1SV325?

The typical capacitance ratio (C1V/C4V) is 4.3.

What is the maximum reverse voltage rating?

The absolute maximum reverse voltage rating is 10 V.

How does series resistance vary with frequency?

The typical series resistance is specified as 0.4 Ω at a test frequency of 100 MHz.