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Product Detailed Parameters
- Description：N60V,25A,RD<24M@10V,VTH1.0V~2.5V
- Series：-
- Mfr：Goford Semiconductor
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：24mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1609 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：41W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The Goford Semiconductor 20N06 is an N-channel MOSFET designed for surface-mount applications. It features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 25A at 25°C case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 24mΩ when tested at 10V gate drive with a 30A current load. It operates within a junction temperature range of -55°C to 150°C and utilizes the TO-252 package.
Feature Summary
- N-channel enhancement mode construction
- Surface-mount TO-252 packaging
- High current capability rated at 25A
Applications
- General purpose switching circuits
- Power management modules
- Industrial control systems
Procurement Notes
Verify the specific manufacturer designation, as the model number appears in distributor listings associated with Goford but may also correspond to other manufacturers using similar naming conventions. Confirm the datasheet source explicitly identifies Goford Semiconductor as the producer before procurement. Ensure the TO-252 package type matches the design requirements.
Selection Notes
Select this component for low-voltage, high-current switching tasks requiring a surface-mount footprint. The 60V rating suits 12V or 24V systems. Evaluate thermal management needs given the 25A current rating and 24mΩ resistance. Verify compatibility with standard TO-252 mounting pads and ensure the gate drive voltage supports the specified Rds(on) performance.
Part Context
This part belongs to the Goford Semiconductor discrete semiconductor portfolio, specifically within the MOSFET category. The company focuses on power devices including MOSFETs for various electronic applications. This specific model represents a standard N-channel device intended for general-purpose use in consumer and industrial electronics.
