2301

Bipolar RF Transistors Overview

The Microsemi Corporation 2301 is a P-channel enhancement mode power MOSFET utilizing advanced trench technology. It operates with a drain-source voltage of -20 V and supports a continuous drain current of -3 A at 25°C case temperature. The device features a maximum on-resistance of 56 mΩ at VGS = -4.5V and 80 mΩ at VGS = -2.5V. Packaged in an SOT-23 surface-mount format, it includes avalanche testing compliance and RoHS certification.

Bipolar RF Transistors Feature Summary

• Advanced trench technology for low gate charge and excellent RDS(ON)
• 100% avalanche tested for ruggedness
• RoHS compliant construction

Bipolar RF Transistors Applications

• Power switch circuits
• DC/DC converters

Bipolar RF Transistors Procurement Notes

Verify the manufacturer designation carefully, as the provided datasheet originates from gofordsemi.com rather than Microsemi Corporation's official channels. Confirm that the component matches the specific electrical parameters and package dimensions listed in the local documentation before integration into designs.

Bipolar RF Transistors Selection Notes

Select this component for applications requiring a compact P-channel switch with a -20 V rating. Ensure the gate drive voltage meets the threshold requirements for the desired on-resistance level. Verify thermal management capabilities against the specified junction-to-ambient resistance values.

Bipolar RF Transistors Part Context

This part number corresponds to a generic P-channel MOSFET specification often found in various semiconductor catalogs. While attributed to Microsemi Corporation in the prompt, the source document indicates a different origin. It serves as a standard switching element in low-voltage power management architectures.

Bipolar RF Transistors Replacement Considerations

Direct substitutes include other -20 V P-channel MOSFETs in SOT-23 packages such as the NX2301P or SI2301BDS, provided their current ratings and on-resistance specifications meet the circuit requirements.

Bipolar RF Transistors FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current (IDM) is rated at -12 A.

Is the device avalanche rated?

Yes, the datasheet specifies that the device is 100% avalanche tested.

What is the typical gate charge?

The total gate charge (Qg) is typically 8 nC under test conditions of VDD = -4.5V, ID = -3A, and VGS = -10V.