Bipolar RF Transistors 2307 product image

2307

$105.73
  • Description:RF TRANS NPN 42V 2.3GHZ 55BT
  • Series:-

SKU:6211080fa899 Category: Brand:

  
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2307 is listed in the Bipolar RF Transistors range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is RF TRANS NPN 42V 2.3GHZ 55BT. Review the specifications below when checking this part for your BOM.

Bipolar RF Transistors specifications for 2307

  • Description:RF TRANS NPN 42V 2.3GHZ 55BT
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):42V
  • Frequency - Transition:2.3GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:8dB
  • Power - Max:20.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 500mA, 5V
  • Current - Collector (Ic) (Max):1A
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:55BT
  • Supplier Device Package:55BT
  • Grade:-
  • Qualification:-

Bipolar RF Transistors datasheet and documents for 2307

2307

Bipolar RF Transistors Overview

The MAPLAD30KP51A/TR is a Trans Voltage Suppressor Diode manufactured by Microsemi Corporation. It features a unidirectional configuration with a single silicon element housed in a plastic package-1 (S-PSSO-G1). The device has a maximum non-repetitive peak reverse power dissipation of 30000 W and a working reverse voltage V(RWM) of 51V. Electrical characteristics include a breakdown voltage range from 56.7 V to 62.7 V, with a nominal value of 59.7 V. The maximum clamping voltage is specified at 82.4 V. The component is not RoHS compliant and carries an ECCN code of EAR99.

Bipolar RF Transistors Feature Summary

  • High energy absorption capability for transient voltage suppression
  • Unidirectional protection configuration for sensitive circuits
  • Single-element silicon construction for robust performance

Bipolar RF Transistors Applications

  • Protection against high-energy transients in industrial systems
  • Surge suppression in power distribution networks
  • Transient voltage protection for critical electronic components

Bipolar RF Transistors Procurement Notes

Verify the specific ordering suffix TR for tape and reel packaging requirements. Confirm RoHS non-compliance status aligns with project environmental regulations. Check lead time availability as this may be a specialized high-power component. Ensure the S-PSSO-G1 package dimensions fit the designated PCB layout constraints before finalizing procurement orders.

Bipolar RF Transistors Selection Notes

Select this component when applications require handling up to 30000 W peak pulse power. Ensure the system operating voltage does not exceed the 51V working reverse voltage rating. Verify that the unidirectional polarity matches the circuit design requirements. Consider the plastic package thermal characteristics for adequate heat dissipation during repeated surge events.

Bipolar RF Transistors Part Context

This part belongs to the MAPLAD series of high-power TVS diodes designed for extreme transient protection. It complements lower-power variants like the MXL15KP51AE3 which offers 15000 W capability. The MAPLAD series targets applications demanding superior surge immunity compared to standard DO-204AR packaged devices.

Bipolar RF Transistors Replacement Considerations

The MXL15KP51AE3 provides similar 51V clamping but with reduced 15000 W power rating. Verify if the lower energy handling capacity meets the specific application surge requirements before substituting.

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