25N06

Single FETs, MOSFETs Overview

The UMW 25N06 is a 60V N-channel enhancement mode power MOSFET utilizing advanced trench technology. It provides excellent on-state resistance and low gate charge, ensuring fast switching performance. The device is rated for a continuous drain current of 25A at 25°C case temperature and supports a pulsed drain current of 100A. It features a typical RDS(ON) of 23mΩ at VGS=10V and 30mΩ at VGS=4.5V. The component includes an integrated body diode with a reverse recovery time of 18.8ns. It is designed for high-efficiency power switching applications.

Single FETs, MOSFETs Feature Summary

• Advanced trench technology design for low on-resistance and fast switching
• High avalanche energy capability verified by single pulse testing
• Low gate charge and reverse transfer capacitance for efficient drive requirements

Single FETs, MOSFETs Applications

• Power switch circuits for adapters and chargers
• LED backlight drivers
• Synchronous rectification

Single FETs, MOSFETs Procurement Notes

Verify the specific package marking and ordering information against the manufacturer's official documentation before procurement. Confirm that the TO-252 package dimensions and reel specifications match the required manufacturing equipment. Ensure compliance with RoHS standards as stated in the product description. Check for any specific handling or storage requirements defined in the datasheet to maintain component integrity during assembly.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 60V N-channel MOSFET with high current handling capabilities. Consider the thermal resistance values when designing heat dissipation strategies, particularly for continuous operation near the maximum rating. Evaluate the gate threshold voltage range to ensure compatibility with the intended control logic levels. Verify that the package type fits the available PCB footprint and mounting constraints.

Single FETs, MOSFETs Part Context

This part belongs to the family of N-channel power MOSFETs manufactured by UMW (Unisonic Technologies). It is designed for general-purpose power switching applications where efficiency and switching speed are critical. The device is housed in a TO-252 package, suitable for surface-mount assembly. It represents a standard solution for medium-power conversion and regulation tasks in consumer electronics and industrial equipment.

Single FETs, MOSFETs Replacement Considerations

When replacing this component, ensure the substitute matches the 60V drain-source voltage and 25A continuous current ratings. Verify that the replacement has comparable on-resistance and gate charge characteristics to maintain circuit performance. Check package compatibility and pinout alignment to avoid redesigning the PCB layout.