2729GN-300V

2729GN-300V

  • Description:RF MOSFET HEMT 50V 55-QP
  • Series:-

SKU:cb89a832a3e2 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET HEMT 50V 55-QP
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:HEMT
  • Frequency:2.7GHz ~ 2.9GHz
  • Gain:15.3dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:75 mA
  • Power - Output:335W
  • Voltage - Rated:125 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:55-QP
  • Supplier Device Package:55-QP
  • Configuration:-

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2729GN-300V

Overview

The Microchip Technology 2729GN-300V is a GaN-on-SiC HEMT transistor designed for S-band pulsed surveillance radar applications. It operates within the 2700 MHz to 2900 MHz frequency band, delivering 300 Watts of pulsed RF output power at a 100 µs pulse width and 11% duty cycle. The device features a hermetically sealed 55-QP package with gold metallization for high reliability. Key electrical parameters include a drain-source voltage (VDSS) of 125 V, gate-source voltage range of -8 V to 0 V, and a maximum operating junction temperature of +250°C. It provides over 14.5 dB gain and up to 58% drain efficiency under specified bias conditions.

Feature Summary

  • Internally matched common source Class AB configuration
  • Hermetically sealed construction with gold metallization
  • High thermal conductivity substrate design
  • Optimized for pulsed operation modes

Applications

  • S-Band Primary Pulsed Surveillance Radar Systems

Procurement Notes

Verify the specific revision level against the latest official datasheet before implementation. Confirm that the required pulse width and duty cycle parameters align with the system's operational limits. Ensure proper thermal management solutions are integrated to maintain junction temperatures within the specified maximum rating during continuous pulsed operation cycles.

Selection Notes

Select this component for applications requiring high power density in the S-band spectrum. Consider the 55-QP package dimensions when designing the mechanical interface. Evaluate the need for the internally matched pallet version if impedance matching networks are not available in the host system architecture.

Part Context

This device belongs to the 2729GN series of Gallium Nitride High Electron Mobility Transistors. It utilizes Silicon Carbide substrates to support high power dissipation and thermal performance. The product line is engineered specifically for defense and aerospace radar systems requiring robust performance in harsh environments.

Replacement Considerations

Consult official documentation for qualified substitute part numbers. Verify pin compatibility and thermal resistance specifications when evaluating alternative components from other manufacturers.

2729GN-300V2729GN-300V

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