2N1717

Single Bipolar Transistors Overview

The Microchip Technology 2N1717 is an NPN bipolar junction transistor designed for amplification and switching applications. It features a collector-emitter voltage rating of 100V and a continuous collector current capacity of 1A. The device operates with a transition frequency of 16 MHz and provides a DC current gain (hFE) range of 40 to 200. Packaged in a hermetically sealed TO-39 metal can, it offers robust performance for general-purpose discrete semiconductor tasks.

Single Bipolar Transistors Feature Summary

• Hermetically sealed TO-39 metal package for environmental protection
• NPN configuration suitable for general-purpose amplification and switching
• High collector current capability of 1A for power handling

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• Electronic switching applications
• Discrete component designs requiring hermetic sealing

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin carefully, as the 2N1717 designation is used by multiple suppliers including Central Semiconductor and Texas Instruments. Ensure the specific datasheet matches the required electrical characteristics, particularly the current gain and package type, before procurement. Confirm RoHS compliance status if applicable to your manufacturing standards.

Single Bipolar Transistors Selection Notes

Select this component when a hermetically sealed NPN transistor with 100V collector voltage and 1A current rating is required. Consider the TO-39 package constraints for PCB layout or chassis mounting. Evaluate the 16 MHz transition frequency against your circuit's speed requirements to ensure adequate performance for the intended application.

Single Bipolar Transistors Part Context

The 2N1717 belongs to the family of standard NPN bipolar transistors. It is commonly utilized in industrial and military-grade electronics where reliability and hermetic sealing are critical. The part serves as a fundamental discrete semiconductor element for building larger amplifier stages or control switches.