Single Bipolar Transistors 2N2368 PBFREE product image

2N2368 PBFREE

  • Description:TRANS NPN TO18
  • Series:-

SKU:aeda1cb131b2 Category: Brand:

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2N2368 PBFREE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is TRANS NPN TO18. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N2368 PBFREE

  • Description:TRANS NPN TO18
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):400µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 10mA, 1V
  • Power - Max:-
  • Frequency - Transition:400MHz
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package:TO-18
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N2368 PBFREE

2N2368 PBFREE

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N2368 PBFREE is an NPN small-signal transistor housed in a TO-18 metal can package. It is designed for saturation switching applications with a collector-emitter breakdown voltage of 40 V and a collector-base breakdown voltage of 15 V. The device supports a maximum continuous collector current of 10 mA and features a DC current gain (hFE) ranging from 20 to 60 at 10 mA. Electrical characteristics include a collector cutoff current of 0.4 mA, a transition frequency of 400 MHz, and saturation voltages of 1.0 V at 10 mA base current and 0.25 V at 10 mA collector current.

Single Bipolar Transistors Feature Summary

  • Optimized for fast saturation switching operations
  • High-frequency performance suitable for RF/IF circuits
  • Robust metal can construction for mechanical stability

Single Bipolar Transistors Applications

  • Saturation switching circuits
  • RF and IF oscillator stages
  • General-purpose amplification

Single Bipolar Transistors Procurement Notes

Verify the End-of-Life status directly with Central Semiconductor before design finalization. Confirm whether legacy inventory remains available or if alternative sourcing strategies are required. Request official datasheets and environmental compliance documentation to ensure adherence to project specifications and regulatory standards.

Single Bipolar Transistors Selection Notes

Evaluate the 40 V collector-emitter rating against circuit peak voltages. Ensure the 10 mA collector current limit meets load requirements. Consider the TO-18 through-hole package constraints for PCB layout. Verify thermal dissipation capabilities within the operating temperature range.

Single Bipolar Transistors Part Context

This component belongs to the Central Semiconductor small-signal transistor portfolio, specifically categorized for general-purpose and switching uses. It utilizes standard NPN silicon technology packaged in a hermetically sealed metal can. The device serves as a discrete semiconductor solution for analog and digital signal processing tasks.

Single Bipolar Transistors Replacement Considerations

Official documentation lists no suggested replacement part numbers for the 2N2368. Designers must identify equivalent components based on matching electrical parameters and physical footprint requirements.

2N2368 PBFREE2N2368 PBFREE

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