2N3108 TIN/LEAD

Single Bipolar Transistors Overview

The 2N3108 TIN/LEAD is a bipolar junction transistor (BJT) manufactured by Central Semiconductor Corp. It is an NPN type device designed for through-hole mounting in TO-39 metal can packages. Key electrical specifications include a collector-emitter breakdown voltage of 60 V, a maximum power dissipation of 800 mW, and a collector cutoff current of 10 nA. The device exhibits a collector-emitter saturation voltage of 1 V at specified currents and provides a minimum DC current gain (hFE) of 40 under defined test conditions.

Single Bipolar Transistors Feature Summary

• Utilizes a hermetically sealed TO-39 metal can package for robust environmental protection
• Engineered as an NPN bipolar junction transistor with high voltage tolerance
• Features low collector cutoff current to minimize leakage in standby states

Single Bipolar Transistors Applications

• General-purpose switching circuits requiring reliable NPN control
• Amplifier stages within discrete component designs
• Industrial equipment utilizing through-hole metal can packaging standards

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix corresponding to the tin/lead plating requirement, as lead-free alternatives may exist within the same product family. Confirm that the TO-39 metal can package dimensions align with the target PCB or chassis layout constraints. Ensure that the thermal management strategy accommodates the 800 mW power dissipation rating under the intended operating ambient temperature conditions.

Single Bipolar Transistors Selection Notes

Select this component when a hermetically sealed NPN transistor is required for high-reliability applications. The TO-39 package offers superior thermal conductivity compared to plastic equivalents. Verify that the 60 V collector-emitter voltage rating exceeds the maximum circuit voltage peaks. Consider the 800 mW power dissipation limit when designing heat sinking solutions for continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the broader category of bipolar junction transistors produced by Central Semiconductor Corp. The manufacturer specializes in discrete semiconductor devices, including diodes, thyristors, and transistors. The 2N3108 represents a standard military-grade style component often utilized in legacy systems or specialized industrial electronics where radiation hardness or extreme environmental stability is prioritized over miniaturization.

Single Bipolar Transistors Replacement Considerations

Direct replacements must match the NPN configuration, TO-39 package, and 60 V minimum voltage rating. Cross-reference datasheets for equivalent hFE ranges and power dissipation capabilities. Verify pinout compatibility to ensure collector, base, and emitter connections align correctly without modification.