Single Bipolar Transistors 2N3415 TRA TIN/LEAD product image

2N3415 TRA TIN/LEAD

$0.50
  • Description:25V 500MA 625MW TH TRANSISTOR-SM
  • Series:-

SKU:183d6a988bc1 Category: Brand:

  
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2N3415 TRA TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 25V 500MA 625MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N3415 TRA TIN/LEAD

  • Description:25V 500MA 625MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 3mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 2mA, 4.5V
  • Power - Max:625 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N3415 TRA TIN/LEAD

2N3415 TRA TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N3415 TRA TIN/LEAD is a silicon NPN general-purpose amplifier transistor. It utilizes a through-hole mounting style within a TO-92-3 package configuration. The device supports a collector-emitter voltage of 25 V and a collector-base voltage of 30 V, with an emitter-base voltage rating of 5 V. It handles a continuous collector current of 200 mA and dissipates up to 625 mW of power. The component operates reliably between -65°C and +150°C, featuring a gain-bandwidth product of 300 MHz.

Single Bipolar Transistors Feature Summary

  • Designed for general-purpose amplification and switching applications requiring moderate collector currents.
  • Constructed using silicon technology for stable performance across wide temperature ranges.
  • Provides high DC current gain characteristics suitable for low-power signal processing tasks.

Single Bipolar Transistors Applications

  • General-purpose audio and RF amplification circuits
  • Low-power electronic switching applications
  • Signal conditioning in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TRA against official datasheets to confirm tin/lead plating and reel packaging details. Ensure compatibility with RoHS directives if lead-free alternatives are required. Cross-reference pinouts with standard TO-92 configurations to prevent installation errors during assembly.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN transistor with a 200 mA collector current capability is needed. The 300 MHz gain-bandwidth product makes it suitable for frequencies beyond basic audio ranges. Consider the TO-92 package size for prototyping or applications where surface-mount options are not feasible.

Single Bipolar Transistors Part Context

This part belongs to the broader category of small-signal bipolar junction transistors (BJTs). It serves as a fundamental active element in analog circuit design. Central Semiconductor manufactures this device to meet standard industry specifications for reliability and electrical performance in discrete semiconductor applications.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers include PN100A, which shares similar characteristics. Other potential equivalents may exist within the same manufacturer's lineup, but direct substitution requires verification of pinout and electrical limits against the original schematic requirements.

2N3415 TRA TIN/LEAD2N3415 TRA TIN/LEAD
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