2N3487

Single Bipolar Transistors Overview

The Microchip Technology 2N3487 is a silicon NPN power bipolar junction transistor (BJT) designed for high-current applications. It features a collector current rating of 7.5A and a collector-emitter breakdown voltage of 60V. The device operates within an extended temperature range from 0°C to 175°C, ensuring reliability in demanding environments. Packaged in a TO-206AA metal can with three terminals, it serves as a robust discrete semiconductor solution for switching and amplification tasks requiring significant power handling capabilities.

Single Bipolar Transistors Feature Summary

• High current capability supporting up to 7.5A collector current
• Extended operational temperature range suitable for harsh conditions
• Robust metal TO-206AA package construction

Single Bipolar Transistors Applications

• Power switching circuits
• Industrial control systems
• Amplifier stages requiring high current drive

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer designation when sourcing, as historical data links this part number to Microsemi Corporation prior to its acquisition by Microchip Technology. Ensure the component meets the required military or industrial specifications if applicable, as variants may exist. Confirm the package type matches the intended PCB footprint and thermal management requirements before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select the 2N3487 for designs necessitating high continuous collector current and wide thermal tolerance. Its NPN polarity and silicon technology make it suitable for general-purpose power applications. Consider the TO-206AA package size and mounting style during mechanical design integration. Evaluate thermal dissipation needs carefully given the 7.5A rating to ensure safe operating area compliance under load.

Single Bipolar Transistors Part Context

This component belongs to the family of general-purpose NPN power transistors. It is often grouped with similar devices like the 2N3488 and 2N3489, which share comparable structural characteristics but differ in voltage ratings. The 2N3487 specifically targets applications where moderate voltage blocking combined with high current capacity is essential for reliable operation.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not explicitly documented in the provided source material. Cross-reference with equivalent NPN power BJTs having matching 60V Vceo and 7.5A Ic ratings only after verifying pinout compatibility and thermal performance.