2N3500U4

Single Bipolar Transistors Overview

The Microchip Technology 2N3500U4 is an NPN small-signal bipolar junction transistor (BJT) designed for surface-mount applications. It features a silicon construction with a maximum collector-emitter voltage of 150 V and a continuous collector current rating of 300 mA. The device dissipates up to 1 W of power and operates within a temperature range of -65°C to +200°C. Key electrical parameters include a collector-base voltage of 150 V, an emitter-base voltage of 6 V, and a collector-emitter saturation voltage of 400 mV. DC current gain ranges from a minimum of 15 to a maximum of 120.

Single Bipolar Transistors Feature Summary

• High-temperature operation capability up to 200°C
• Surface-mount compatible SMD-0.22-3 package design
• Single NPN configuration for signal processing

Single Bipolar Transistors Applications

• General-purpose small-signal amplification
• Switching circuits requiring high thermal stability
• Industrial control systems operating in extreme environments

Single Bipolar Transistors Procurement Notes

Verify the specific suffix U4 indicates tape-and-reel packaging when ordering. Confirm RoHS status as non-compliant based on available documentation. Ensure order quantities align with manufacturer reel requirements. Validate that the intended application supports the specified voltage and current limits. Check for recent product change notifications affecting specifications.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust performance at elevated temperatures. The 150 V rating suits medium-voltage switching tasks. Compare saturation voltage characteristics against alternative transistors for efficiency needs. Ensure PCB layout accommodates the SMD-0.22-3 footprint. Verify thermal management strategies for 1 W dissipation.

Single Bipolar Transistors Part Context

This part belongs to Microchip's discrete BJT portfolio, continuing legacy specifications adapted for modern surface-mount manufacturing. It serves as a solid-state replacement for through-hole equivalents in compact designs. The device maintains reliability standards for industrial and aerospace sectors where long-term stability is critical.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the JANS2N3500L for radiation-hardened or long-lead requirements. Evaluate the standard 2N3500 for bulk packaging needs. Cross-reference pinouts and thermal resistance values before substitution.