2N3702_D75Z

Single Bipolar Transistors Overview

The onsemi 2N3702_D75Z is a PNP epitaxial silicon transistor designed for general-purpose amplifier and switching applications. It features a collector current capability of -500 mA, a collector-emitter voltage rating of -25 V, and a collector-base voltage of -40 V. The device operates within a junction temperature range of -55°C to +150°C with a total power dissipation of 625 mW at 25°C ambient. Key electrical characteristics include a DC current gain (hFE) ranging from 60 to 300 at -50 mA, an output capacitance of 12 pF, and a transition frequency of 100 MHz.

Single Bipolar Transistors Feature Summary

• PNP epitaxial silicon construction optimized for general-purpose amplification and switching tasks
• High DC current gain performance suitable for low-level signal processing
• Robust thermal stability supporting operation up to 150°C junction temperature

Single Bipolar Transistors Applications

• General-purpose audio and RF amplifiers
• Low-power switching circuits
• Driver stages in logic interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific suffix D75Z against official documentation to confirm packaging configuration and reel specifications. Ensure compatibility with existing PCB footprints for TO-92-3 kinked lead packages. Cross-reference datasheet revision history for any updates to absolute maximum ratings or thermal resistance values prior to final design approval.

Single Bipolar Transistors Selection Notes

Select this component when a standard PNP small-signal transistor is required for moderate current switching or linear amplification. Consider the -500 mA continuous collector current limit and 625 mW power dissipation constraints during thermal management planning. Evaluate the hFE spread of 60 to 300 for circuit biasing stability requirements.

Single Bipolar Transistors Part Context

This part belongs to the legacy Fairchild Semiconductor product line now managed by onsemi. Originally sourced from Process 68, it serves as a direct replacement for older designs utilizing the 2N3702 designation. The device maintains pinout compatibility with industry-standard TO-92 configurations, facilitating integration into established electronic systems.

Single Bipolar Transistors Replacement Considerations

Consult the datasheet for equivalent parts such as the PN200 series. Verify that substitute components match the -25 V VCEO rating and -500 mA IC limits. Confirm package dimensions align with existing mechanical constraints before implementation.